278
Photomicrosensor (Transmissive) EE-SJ8-B
Photomicrosensor (Transmissive)
EE-SJ8-B
I Dimensions
Note: All units are in millimeters unless otherwise indicated.
I Features
" 18-mm-tall model with a deep slot.
" PCB mounting type.
" High resolution with a 0.5-mm-wide aperture.
" RoHS Compliant.
I Absolute Maximum Ratings (Ta = 25?SPAN class="pst EE-SJ8-B_2586438_6">C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25癈.
2. The pulse width is 10 ?/SPAN>s maximum with a frequency of 100 Hz.
3. Complete soldering within 10 seconds.
I Ordering Information
I Electrical and Optical Characteristics (Ta = 25?SPAN class="pst EE-SJ8-B_2586438_6">C)
Internal Circuit
K
A
C
E
Terminal No. Name
A
Anode
K
Cathode
C
Collector
E
Emitter
Dimensions Tolerance
3 mm max.
?.3
3 < mm d 6
?.375
6 < mm d 10
?.45
10 < mm d 18
?.55
18 < mm d 30
?.65
Unless otherwise specified, the
tolerances are as shown below.
K
6.5
0.3
0.5
15?.2
3 min.
2.1
0.5
Cross section BB
20
8
B
A
0.2
13.9?.3
C-1
B
A
Four, 0.25
18?.2
4
3.5
1.94
Four, 0.5
2.1
0.5
Cross section AA
0.8
0.8
(11.9)
1.2
1.2
3.2
C
A
E
Item
Symbol
Rated value
Emitter
Forward current
I
F
50 mA (see note 1)
Pulse forward current I
FP
1 A (see note 2)
Reverse voltage
V
R
4 V
Detector
CollectorEmitter
voltage
V
CEO
30 V
EmitterCollector
voltage
V
ECO
---
Collector current
I
C
20 mA
Collector
dissipation
P
C
100 mW
(see note 1)
Ambient
temperature
Operating
Topr
25癈 to 85癈
Storage
Tstg
30癈 to 100癈
Soldering temperature
Tsol
260癈 (see note 3)
Description
Model
Photomicrosensor (transmissive)
EE-SJ8-B
Item
Symbol
Value
Condition
Emitter
Forward voltage
V
F
1.2 V typ., 1.5 V max.
I
F
= 30 mA
Reverse current
I
R
0.01 礎 typ., 10 礎 max.
V
R
= 4 V
Peak emission wavelength
?/DIV>
P
940 nm typ.
I
F
= 20 mA
Detector
Light current
I
L
0.05 mA min., 5 mA max.
I
F
= 20 mA, V
CE
= 10 V
Dark current
I
D
2 nA typ., 200 nA max.
V
CE
= 10 V, 0 lx
Leakage current
I
LEAK
---
---
CollectorEmitter saturated
voltage
V
CE
(sat)
---
---
Peak spectral sensitivity
wavelength
?/DIV>
P
850 nm typ.
V
CE
= 10 V
Rising time
tr
4 祍 typ.
V
CC
= 5 V, R
L
= 100 &, I
L
= 5 mA
Falling time
tf
4 祍 typ.
V
CC
= 5 V, R
L
= 100 &, I
L
= 5 mA
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